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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:150 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:3.8 ns
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Overview
The 71V3576S150PFG is a high-performance synchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a density of 4 Mbit organized as 128K x 36 bits, supporting a maximum clock frequency of 150 MHz with an access time of 5 ns. The device operates on a single 3.3V power supply and utilizes a parallel interface for data transfer. It is housed in a 100-pin TQFP package suitable for surface-mount applications. The component supports standard dynamic random-access memory (SDR) burst modes and includes boundary scan capabilities via JTAG for testing purposes.
Feature Summary
- Supports synchronous pipeline burst operations for high-speed data throughput
- Enables simultaneous read/write access through independent address and control lines
- Integrates boundary scan (JTAG) interface for manufacturing testability
- Features low-power standby mode controlled by dedicated input pins
Applications
- High-speed digital signal processing systems
- Network infrastructure equipment requiring fast buffer memory
- Industrial automation controllers with strict timing requirements
- Telecommunications base stations and routers
Procurement Notes
Verify the specific suffix 'PFG' to confirm the 100-pin TQFP package configuration and industrial temperature range availability. Ensure compatibility with 3.3V logic levels in the target circuit design. Confirm current production status and lead times directly with authorized distributors, as inventory levels fluctuate. Check for RoHS compliance documentation if environmental regulations apply to the final assembly.
Selection Notes
Select this component when system architecture demands a 36-bit wide data path at frequencies up to 150 MHz. Compare against asynchronous alternatives if lower latency is not critical but simpler control logic is preferred. Evaluate pin count constraints, as the 100-pin package requires adequate PCB real estate. Consider thermal dissipation requirements associated with synchronous SRAM operation under continuous load conditions.
Part Context
This part belongs to the 71V3576 family of synchronous SRAMs designed for demanding embedded applications. It shares architectural similarities with other members like the 71V3577 but differs in speed grade and organization. The family targets markets requiring reliable, high-bandwidth memory solutions where deterministic access times are essential for system stability and performance optimization.
Replacement Considerations
Direct substitutes include the 71V3576S166PFGI for higher clock speeds or the 71V3577 series for similar functionality with potential pin-out variations. Verify electrical characteristics and package dimensions before swapping to ensure mechanical fit and signal integrity.
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