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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:150 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:3.8 ns
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Overview
The Renesas 71V3576S150PFG8 is a 3.3V CMOS synchronous single-data-rate (SDR) static random-access memory with a total capacity of 4.5 Mbit. The device is organized as 128K words by 36 bits, providing a wide data interface suitable for high-performance applications. It operates with a maximum clock frequency of 150 MHz and utilizes a parallel memory interface. The component features synchronous pipe-lined burst architecture to optimize data throughput in demanding system environments.
Feature Summary
- Supports synchronous single-data-rate operation for efficient data transfer
- Features a 36-bit wide data bus for high-bandwidth requirements
- Includes write, data, address, and control registers for precise management
- Utilizes pipe-lined burst mode architecture to enhance performance
Applications
- High-speed buffering in communication systems
- Caching applications in embedded processing
- Data storage in network infrastructure equipment
Procurement Notes
Verify the specific suffix PFG8 against official Renesas documentation to confirm package type and temperature range. Ensure compatibility with 3.3V logic levels and 150 MHz clock requirements. Confirm RoHS compliance status through current datasheets. Validate supply chain authenticity via authorized distributors.
Selection Notes
Select this component when a wide 36-bit data path is required for synchronous SRAM applications. Consider the 150 MHz operating speed for high-throughput needs. Evaluate power consumption at 3.3V relative to system constraints. Compare organization density against alternative memory solutions for optimal fit.
Part Context
This part belongs to the 71V3576 family of 3.3V CMOS synchronous SRAMs. The family offers various organizations and speeds tailored for different bandwidth demands. The 71V3576 series is designed for robust performance in industrial and commercial environments requiring reliable data storage.
Replacement Considerations
Check for direct pin-compatible alternatives within the 71V3576 family with different speed grades or organizations. Verify electrical characteristics match before substitution.
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