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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:150 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:3.8 ns
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Overview
The Renesas Electronics Corporation 71V3576S150PFGI8 is a high-speed synchronous static random access memory (SRAM) organized as 128K x 36 bits, providing a total storage capacity of 4.5 Mbit. Operating at a maximum clock frequency of 150 MHz with an access time of 3.8 ns, this device utilizes a parallel interface and supports burst mode operations. It functions within a supply voltage range of 3.135 V to 3.465 V and is housed in a 100-pin TQFP surface-mount package.
Feature Summary
- Supports synchronous pipeline burst mode for efficient data transfer
- Integrates dedicated write, data, address, and control registers
- Features high-speed parallel interface architecture
Applications
- High-performance computing systems requiring fast memory access
- Network infrastructure equipment
- Telecommunications base stations
Procurement Notes
Verify the exact part number suffix against official Renesas documentation to confirm pinout compatibility and electrical specifications. Ensure that the selected variant matches the required operating temperature range and packaging style for your specific design implementation. Cross-reference datasheets for any recent product change notices or lifecycle status updates before finalizing procurement plans.
Selection Notes
Select this component when a wide data bus width of 36 bits is required alongside high-frequency synchronous operation. The 150 MHz clock speed and low access time make it suitable for applications demanding rapid data throughput. Consider the 100-pin TQFP package constraints during PCB layout to ensure adequate thermal management and signal integrity for the parallel interface connections.
Part Context
This device belongs to the IDT 71V3576/78 family of high-speed SRAMs manufactured by Renesas Electronics. The series is designed to provide robust memory solutions for demanding digital applications. The 71V3576 variant specifically offers the 128K x 36 organization, distinguishing it from other members of the family that may feature different capacities or bit widths.
Replacement Considerations
Consult official Renesas substitution guides for verified alternatives. Direct replacements must maintain identical organization, speed grades, and package dimensions to ensure board-level compatibility without redesign.
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