71V3577S75BG

Overview

The Renesas Electronics Corporation 71V3577S75BG is a synchronous static random-access memory (SRAM) device organized as 128K x 36, providing a total storage capacity of 4.5 Mbit. It operates with a maximum clock frequency of 117 MHz and features an access time of 7.5 ns. The component utilizes a parallel interface and functions within a supply voltage range of 3.135 V to 3.465 V. It is housed in a 119-pin PBGA package measuring 14x22 mm and supports surface mount installation. The device is designed for single data rate (SDR) applications.

Feature Summary

• Supports burst mode operations offering interleaved or linear configurations via LBO input selection.
• Includes self-timed write cycles controlled by global write control, byte write enable, and individual byte writes.
• Features power-down functionality managed through the ZZ input pin.

Applications

• High-performance embedded systems requiring fast data access
• Network infrastructure equipment
• Industrial automation controllers

Procurement Notes

Verify current availability status as this component may be subject to end-of-life notices. Confirm RoHS compliance requirements against specific project standards, as older batches may not meet current environmental regulations. Ensure proper handling procedures are followed due to moisture sensitivity classification. Validate that the 119-pin PBGA footprint matches the target PCB design constraints before finalizing procurement decisions.

Selection Notes

Select this component when a 36-bit wide data bus is required for system architecture compatibility. Consider the 7.5 ns access speed for timing-critical synchronous interfaces. Evaluate the 119-pin BGA package size against available board real estate. Ensure the operating temperature range aligns with the intended deployment environment specifications.

Part Context

This part belongs to the 71V3577 family of 3.3V CMOS SRAMs. It shares architectural similarities with other variants in the series but differs in package type and specific electrical characteristics. The device represents a high-density memory solution designed for applications demanding low latency and high throughput capabilities within compact form factors.

Replacement Considerations

Check for direct substitutes such as the 71V3577S80BGI if slightly slower access times are acceptable. Verify pinout compatibility and electrical parameter overlaps before attempting any cross-referencing with alternative manufacturers' offerings.