71V3577S75BGG8

Overview

The 71V3577S75BGG8 is a synchronous static random-access memory (SRAM) device manufactured by Renesas Electronics Corporation. It features a storage organization of 128K x 36 bits, providing a total capacity of 4 Mbit. The component operates with a maximum clock frequency of 117 MHz and achieves an access time of 7.5 ns. It utilizes a parallel interface and functions within a supply voltage range of 3.135 V to 3.465 V. The device is housed in a 119-pin PBGA package measuring 14x22 mm and supports surface-mount installation.

Feature Summary

• Supports synchronous single data rate (SDR) operation with flow-through output architecture for high-speed data transfer.
• Includes self-timed write cycles controlled by global write control, byte write enable, and individual byte writes.
• Features low battery detect (LBO) input to select between interleaved or linear burst modes.
• Incorporates power-down functionality managed by the ZZ input pin.

Applications

• High-performance computing systems requiring fast synchronous memory access
• Industrial equipment utilizing real-time engine microcontrollers
• Network infrastructure solutions demanding reliable data buffering

Procurement Notes

This component has reached end-of-life status, with discontinuation effective January 3, 2024. Verification of current availability through authorized distributors is essential, as stock levels are limited. Engineers should confirm moisture sensitivity level (MSL 3) handling requirements during procurement and storage to ensure device integrity upon installation.

Selection Notes

Designers must account for the 119-pin PBGA footprint when defining board layout constraints. The 3.3V I/O compatibility requires matching logic levels within the system. Consideration of the 7.5 ns access time is necessary for timing closure in high-frequency applications operating up to 117 MHz. Thermal management within the specified 0°C to 70°C operating range must be validated.

Part Context

The 71V3577S75BGG8 belongs to the 71V3577 series of 3.3V CMOS SRAMs. This family offers various package options including TQFP and fpBGA configurations. The specific BGG8 suffix denotes the 119-pin PBGA variant. The series is designed for applications requiring high-density synchronous memory with flexible burst mode capabilities.

Replacement Considerations

IDT71V3577SA75BGG is listed as a similar replacement option. Verify pinout compatibility and electrical specifications before substitution. Ensure the alternative component meets the required 117 MHz performance and 119-pin package dimensions.