71V3577S75BGI

71V3577S75BGI

$8.25
  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:a84b28628846 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:117 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:7.5 ns

Download product information

71V3577S75BGI

Overview

The Renesas Electronics Corporation 71V3577S75BGI is a synchronous static random-access memory (SRAM) device organized as 128K x 36, providing a total storage capacity of 4.5 Mbit. It operates with a maximum clock frequency of 117 MHz and features a typical access time of 7.5 ns. The component utilizes a parallel interface and requires a core supply voltage ranging from 3.135 V to 3.465 V. It is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm. The device supports single data rate (SDR) operation and is designed for surface mount installation.

Feature Summary

  • Supports high-speed synchronous burst operations with flow-through architecture for efficient data throughput.
  • Integrates self-timed write cycles controlled by global write control and byte write enable signals.
  • Includes low battery detect input to manage power-down states and preserve data integrity.

Applications

  • High-performance embedded systems requiring fast data buffering
  • Industrial equipment with real-time processing demands
  • Network infrastructure components needing reliable volatile memory

Procurement Notes

Verify the specific suffix BGI against official datasheets to confirm the 119-PBGA package and commercial temperature range. Confirm RoHS compliance status as historical records indicate potential non-compliance for older batches. Check for End-of-Life notifications or discontinuance notices prior to finalizing procurement plans.

Selection Notes

Select this component when a 36-bit wide synchronous SRAM interface is required for system integration. Ensure the design accommodates the 119-pin PBGA footprint and thermal requirements. Verify that the 3.3V I/O levels match the host processor specifications. Consider alternative packages if board space constraints differ from the 14x22 mm form factor.

Part Context

This part belongs to the 71V3577 series of 3.3V CMOS SRAMs manufactured by Renesas Electronics. The series offers various access times and package options to suit different performance and size requirements. It represents a standard solution for applications needing moderate density with high-speed synchronous access capabilities.

Replacement Considerations

IDT71V3577S75BGI is listed as an alias for this component. Verify pinout compatibility before substitution.

71V3577S75BGI71V3577S75BGI
$8.25
Buy Now