71V3577S75BQ

Overview

The IDT71V3577S75BQ is a synchronous single data rate zero bus turnaround static random access memory integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 4.5 megabits organized as 128 kilowords by 36 bits. The device features a parallel interface with a maximum clock frequency of 117 MHz and an access time of 7.5 nanoseconds. It operates within a supply voltage range of 3.135 volts to 3.465 volts and supports surface mount installation in a 165-pin CABGA package measuring 13 by 15 millimeters.

Feature Summary

• Supports synchronous operation with a zero bus turnaround architecture for efficient data transfer
• Provides high-speed parallel data access with a 36-bit wide data path
• Operates on a standard 3.3-volt power supply rail

Applications

• High-performance computing systems requiring fast cache memory
• Network infrastructure equipment utilizing parallel SRAM interfaces
• Industrial control systems needing reliable volatile data storage

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements as the device may not meet current environmental standards. Validate package integrity upon receipt to ensure suitability for automated surface mount assembly processes. Check for moisture sensitivity level handling precautions during storage and reflow soldering operations.

Selection Notes

Select this component when a 36-bit wide synchronous SRAM interface is required for system integration. Ensure the design accommodates the specific 165-pin CABGA footprint and thermal characteristics. Verify that the 117 MHz clock speed meets the timing constraints of the host processor or controller. Consider the operating temperature range limits for the intended deployment environment.

Part Context

This part belongs to the IDT 71V3577 series of synchronous SRAM devices designed for high-throughput applications. The manufacturer utilizes the IDT branding legacy within its product portfolio. The device represents a specific speed grade variant optimized for 7.5 nanosecond access times within the broader family of parallel memory solutions.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.