71V3577S75BQ8

71V3577S75BQ8

$5.77
  • Description:IC SRAM 4.5MBIT PAR 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:e50fa1ce2808 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PAR 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:117 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-TBGA
  • Supplier Device Package:165-CABGA (13x15)
  • Access Time:7.5 ns

Download product information

71V3577S75BQ8

Overview

The Renesas Electronics Corporation 71V3577S75BQ8 is a synchronous single data rate (SDR) static random-access memory integrated circuit. It features a storage capacity of 4.5 megabits organized as 128K by 36 bits. The device operates with a maximum clock frequency of 117 MHz and provides an access time of 7.5 nanoseconds. It utilizes a parallel interface and requires a supply voltage between 3.135 volts and 3.465 volts. The component is housed in a 165-pin CABGA package measuring 13x15 millimeters.

Feature Summary

  • Supports burst mode operations offering four cycles of data for a single address to enhance system performance
  • Includes self-timed write cycles controlled by global write control, byte write enable, and byte write signals
  • Features low power down functionality managed through the ZZ input pin

Applications

  • High-performance real-time engine systems
  • Industrial equipment requiring fast memory access
  • Network infrastructure components

Procurement Notes

Verify current manufacturing status as this component may be obsolete or end-of-life. Confirm availability through authorized distributors only. Check for RoHS compliance variations across production batches. Ensure replacement parts meet identical electrical specifications if sourcing alternatives due to discontinuation.

Selection Notes

Select this part for applications requiring high-speed synchronous memory with a 36-bit data width. Verify that the system supports 3.3V I/O levels and operates within the specified temperature range. Ensure the PCB layout accommodates the 165-pin CABGA package dimensions and pitch requirements for proper surface mount installation.

Part Context

This component belongs to the 71V3577 series of synchronous SRAMs manufactured by Renesas Electronics. The series offers various speed grades and package options including BGA and TQFP formats. These devices are designed for high-throughput data processing tasks requiring low latency and reliable volatile memory storage capabilities.

Replacement Considerations

ISSI IS64LF12836A-7.5B3LA3-TR is listed as a potential substitute part number.

71V3577S75BQ871V3577S75BQ8
$5.77
Buy Now