71V3577S75BQG

Overview

The IDT71V3577S75BQG is a high-speed synchronous SRAM organized as 128K x 36, providing a total storage capacity of 4.5Mb. It operates with a maximum access time of 7.5 ns and supports a clock frequency up to 133 MHz. The device utilizes a 3.3V supply voltage range of 3.135V to 3.465V and features a parallel interface. It is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 mm. The component is designed for flow-through output architectures without registers in the data output path.

Feature Summary

• Supports burst mode operations with an internal burst address counter that accepts the first cycle address from the processor to initiate sequential access sequences.
• Features single-cycle deselect capability, allowing the system designer to terminate burst cycles early if required by the application logic.
• Utilizes a flow-through architecture where no registers are present in the data output path, enabling direct data availability upon address presentation.

Applications

• High-performance cache memory systems requiring fast access times
• Network infrastructure equipment utilizing synchronous SRAM interfaces
• Embedded systems demanding burst data transfer capabilities

Procurement Notes

Verify the specific suffix 'G' against official Renesas or IDT documentation to confirm lead-free status and RoHS compliance, as suffixes define environmental and packaging attributes. Confirm the current manufacturing status, as this part number may be obsolete or subject to product change notices. Ensure the 119-PBGA footprint matches the target PCB design constraints before procurement.

Selection Notes

Select this component when a 128K x 36 organization is required for synchronous applications. The 7.5 ns speed grade suits high-frequency bus interfaces. Compare against pipelined variants like the 71V35761 if pipeline latency is acceptable for higher throughput. Verify that the 3.3V I/O levels are compatible with the host processor's voltage domain.

Part Context

This device belongs to the IDT 71V3577/79 family of 3.3V Synchronous SRAMs. The family includes variations such as the 71V3577SA and 71V3577S, which share similar electrical characteristics but differ in package types or speed grades. The manufacturer, originally Integrated Device Technology, is now part of Renesas Electronics Corporation.

Replacement Considerations

Publicly documented substitutes include the 71V35761SA166BGG and the 71V3577S80BGI. These alternatives offer similar memory organizations but may feature different speeds or pipelined architectures. Verify pin compatibility and electrical specifications before substitution.

FAQ

Does the IDT71V3577S75BQG use a pipelined or flow-through architecture?

It uses a flow-through architecture with no registers in the data output path, distinguishing it from pipelined variants in the same family.

What is the function of the internal burst address counter?

The internal burst address counter accepts the initial address from the processor and automatically generates subsequent addresses for burst cycles, reducing processor overhead.