71V3577S75PFGI8

Overview

The Renesas Electronics Corporation 71V3577S75PFGI8 is a 4.5 Mbit Synchronous Single Data Rate (SDR) Static Random Access Memory (SRAM). It features a parallel interface and is organized as 128K x 36 bits. The device supports a maximum clock frequency of 117 MHz with a typical access time of 7.5 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and is housed in a 100-pin TQFP package.

Feature Summary

• Supports synchronous burst mode operations for high-speed data transfer
• Includes dedicated write, data, address, and control registers
• Utilizes 3.3V CMOS technology for low power consumption

Applications

• High-performance embedded memory systems
• Network infrastructure equipment
• Industrial automation controllers

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements as specific variants may differ. Validate pin compatibility and electrical specifications against current design constraints before integration into new production runs.

Selection Notes

Select this component for applications requiring fast synchronous access times and wide data buses. Ensure the design accommodates the 100-pin TQFP footprint and thermal characteristics. Consider obsolescence risks when planning long-term product lifecycles.

Part Context

This part belongs to the 71V3577 series of synchronous SRAMs from Renesas. It shares architectural similarities with other members like the 71V3577S85 but offers faster timing specifications. The series is designed for demanding digital signal processing and storage applications.

Replacement Considerations

Public confirmed substitute: 71V3577S80BGI.