71V3577S80BGG8

Overview

The IDT71V3577S80BGG8 is a 4.5 Mbit synchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a parallel interface and is organized as 128K x 36 bits. The device supports a maximum clock frequency of 100 MHz with an access time of 8 ns. It operates on a single 3.3 V power supply, with voltage specifications ranging from 3.135 V to 3.465 V. The component is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm. It is designed for industrial temperature ranges between 0°C and 70°C.

Feature Summary

• Supports high-speed synchronous operation with burst mode capabilities for efficient data transfer.
• Features self-timed write cycles controlled by global write control and byte write enable signals.
• Includes low-power standby functionality managed by the ZZ input pin.

Applications

• High-performance computing systems requiring fast data buffering
• Network infrastructure equipment utilizing parallel SRAM interfaces
• Industrial control systems operating within standard temperature ranges

Procurement Notes

Verify current availability status as this component may be subject to end-of-life notices or production changes. Confirm package markings and suffix designations against official datasheets to ensure compatibility with existing designs. Check for any recent product change notifications regarding substrate or labeling updates before finalizing procurement plans.

Selection Notes

Select this part when a 36-bit wide synchronous SRAM interface is required for system architecture. Ensure the design accommodates the 119-pin PBGA footprint and thermal requirements. Verify that the 3.3 V I/O levels match the host controller logic standards. Consider alternative speeds if higher clock frequencies beyond 100 MHz are necessary for the application.

Part Context

This component belongs to the 71V3577 series of 3.3 V synchronous flow-through SRAMs. It shares architectural similarities with other devices in the family, such as the 71V3577S75BGG8, which offers faster access times. The series is characterized by its use in applications demanding reliable, high-speed volatile memory storage with parallel bus connectivity.

Replacement Considerations

The IDT71V3577S80BGG8 has been superseded by the 71V3577S80BGG8 variant. Designers should verify pinout and electrical compatibility when transitioning to newer revisions or equivalent parts from the same manufacturer family.