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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 119PBGA
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:100 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:8 ns
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Overview
The IDT71V3577S80BGGI is a high-speed synchronous SRAM organized as 128K x 36, providing a total storage capacity of 4.5 Mbit. It operates with a maximum access time of 8 ns and supports clock frequencies up to 125 MHz. The device utilizes a single 3.3 V power supply for both core and I/O operations. It features a flow-through output architecture without registers in the data output path. The component is housed in a 119-pin Plastic Ball Grid Array (PBGA) package.
Feature Summary
- Supports burst mode operation with an internal burst address counter for sequential data access
- Features single-cycle deselect capability allowing immediate termination of burst cycles
- Utilizes internally synchronized output buffer enables to eliminate control signal requirements
Applications
- High-performance cache memory systems
- Network infrastructure equipment
- Telecommunications base stations
- Industrial automation controllers
Procurement Notes
Verify the specific suffix BGGI against the manufacturer's official datasheet to confirm pinout compatibility and electrical specifications. Confirm RoHS compliance status as historical production runs may vary. Check current availability as this component series may be subject to discontinuation notices or lifecycle changes from Renesas Electronics.
Selection Notes
Select this component when a 36-bit wide data interface is required for system integration. Ensure the design accommodates the 119-pin PBGA footprint and thermal dissipation requirements. Verify that the host processor supports the synchronous protocol and burst addressing sequences defined in the technical documentation.
Part Context
This part belongs to the IDT 71V3577/79 family of 3.3V Synchronous SRAMs. It shares architectural similarities with pipelined variants but distinguishes itself through its flow-through output design. The family targets applications demanding low latency and high throughput without the complexity of pipeline register stages.
Replacement Considerations
Consult official substitution guides for equivalent 128K x 36 synchronous SRAMs. Verify pin-to-pin compatibility and timing parameters before replacing.
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