71V3577S80BGGI8

Overview

The 71V3577S80BGGI8 is a synchronous static random access memory (SRAM) device manufactured by Renesas Electronics Corporation. It features a storage organization of 128K x 36 bits, providing a total capacity of 4.5 Mbit. The component operates with a maximum clock frequency of 100 MHz and offers an access time of 8 ns. It utilizes a parallel interface and functions within a supply voltage range of 3.135 V to 3.465 V. The device supports a maximum power current of 210 mA and is designed for operation across an extended temperature range from -40°C to +85°C. It is housed in a 119-pin PBGA package measuring 14x22 mm.

Feature Summary

• Supports synchronous single data rate (SDR) operations with flow-through output architecture for high-speed data transfer.
• Includes burst mode capability to provide four cycles of data for a single address presentation, enhancing system performance.
• Features self-timed write cycles controlled by global write control (GW), byte write enable (BWE), and byte writes (BWx).
• Offers optional boundary scan JTAG interface compliance with IEEE 1149.1 standards for testing and verification.

Applications

• High-performance computing systems requiring fast data buffering.
• Network infrastructure equipment utilizing synchronous memory interfaces.
• Industrial automation controllers needing reliable volatile storage.
• Telecommunications base stations processing real-time data streams.

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to potential counterfeits. Confirm RoHS compliance status as the standard BG variant may not meet current environmental regulations. Check for specific suffix variations such as GI8 which indicate lead-free packaging and extended temperature ranges. Ensure availability aligns with project timelines as production status may affect long-term supply continuity.

Selection Notes

Select this model when a 128K x 36 organization is required for wide-data bus applications. Choose the BGGI8 suffix for lead-free construction and industrial temperature range support (-40°C to +85°C). Compare against the 71V3577S80BG if commercial temperature range suffices. Ensure the design accommodates the 119-pin PBGA footprint and 3.3V I/O levels. Verify that the 100 MHz clock speed meets the system's timing requirements.

Part Context

This component belongs to the 71V3577 series of synchronous SRAMs from Renesas. It shares architectural similarities with other devices in the family but differs in speed grade and packaging options. The series is known for its flow-through output and burst mode capabilities. It serves as a high-speed memory solution in embedded systems where low latency and high bandwidth are critical for operational efficiency.

Replacement Considerations

Public confirmed substitute part numbers include IDT71V3577S80BGI8. Verify pin compatibility and electrical specifications before substitution. Ensure the replacement matches the 119-pin PBGA package dimensions and thermal characteristics.