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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:100 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:8 ns
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Overview
The 71V3577S80BQ is a synchronous single data rate static random access memory integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 4.5 Mbit organized as 128K words by 36 bits. The device supports parallel interface operations with an access time of 8 ns and a maximum clock frequency of 100 MHz. It operates within a supply voltage range of 3.135 V to 3.465 V and is housed in a 165-CABGA package measuring 13x15 mm. The component is designed for surface mount installation and functions within an ambient temperature range of 0°C to 70°C.
Feature Summary
- Supports high-speed synchronous parallel data transfer at up to 100 MHz
- Provides 36-bit wide data organization for efficient bus interfacing
- Utilizes flow-through architecture for predictable latency performance
Applications
- High-performance embedded systems requiring fast local memory
- Industrial equipment control units
- Network infrastructure hardware components
Procurement Notes
Verify the specific suffix requirements carefully, as the base model 71V3577S80BQ may denote a specific package or temperature variant distinct from the widely documented BQ8 or BGI8 versions. Confirm RoHS compliance status, as many variants in this series are marked non-compliant. Check for end-of-life notifications, as multiple devices in the 71V3577 family have been discontinued. Ensure the selected package matches the PCB footprint design constraints.
Selection Notes
Select this component when a 36-bit data width is required for system bus compatibility. Consider the 100 MHz speed grade if lower latency than standard asynchronous SRAM is needed without complex controller logic. Evaluate the 165-CABGA package size against available board space. Compare power consumption specifications against other synchronous SRAM options if thermal management is a critical design constraint.
Part Context
This part belongs to the 71V3577 family of synchronous SRAMs, originally developed under IDT branding before acquisition by Renesas. The family typically includes variants with different access times, packages, and temperature ranges. The 71V3577 series is designed to replace older asynchronous memories in high-speed digital applications, offering improved timing predictability through clocked operation.
Replacement Considerations
Publicly confirmed substitute part numbers for this specific variant are not available in the provided documentation. Verify cross-references with ISSI IS64LF12836 series parts only after confirming electrical and pinout compatibility.
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