71V3577S80PFGI8

Overview

The Renesas Electronics Corporation 71V3577S80PFGI8 is a synchronous single data rate static random access memory integrated circuit. It features a storage capacity of 4.5 Mbit organized as 128K x 36 bits. The device supports parallel interface operations with an access time of 8 ns and a maximum clock frequency of 100 MHz. It operates within a supply voltage range of 3.135 V to 3.465 V. The component is housed in a 100-TQFP (14x14) surface-mount package and is rated for an operating temperature range of -40°C to +85°C.

Feature Summary

• Supports high-speed synchronous serial-like data transfer via parallel interface
• Provides reliable volatile data retention within specified industrial temperature limits
• Compatible with standard 3.3V logic systems

Applications

• High-performance embedded processing systems requiring fast memory access
• Industrial control units needing wide data bus interfaces
• Telecommunications equipment utilizing synchronous memory architectures

Procurement Notes

Verify current availability status as the component may be subject to end-of-life notices or limited distribution channels. Confirm that the 100-TQFP package dimensions align with existing PCB footprints. Ensure compliance with RoHS3 specifications if required by the target application environment. Check for moisture sensitivity level handling requirements during assembly processes.

Selection Notes

Select this component when a 36-bit wide data path is necessary for system architecture compatibility. Consider the 8 ns access speed for timing-critical synchronous applications. Evaluate the thermal performance capabilities within the -40°C to +85°C range against environmental constraints. Compare pinout compatibility with legacy designs if migrating from older SRAM families.

Part Context

This part belongs to the 71V3577 series of synchronous SRAMs manufactured by Renesas Electronics. It represents a specific variant optimized for through-hole or surface-mount integration using the TQFP form factor. The series is designed for applications demanding high bandwidth and low latency memory solutions in complex electronic systems.

Replacement Considerations

Direct substitutes include other 128K x 36 synchronous SRAMs with compatible pinouts and electrical characteristics. Verify package equivalence and timing parameters before substitution.