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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:87 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:8.5 ns
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Overview
The Renesas Electronics Corporation 71V3577S85BG is a 4.5 Mbit synchronous static random-access memory (SRAM) organized as 128K x 36 bits. It operates with a maximum clock frequency of 87 MHz and features an access time of 8.5 ns. The device utilizes a parallel interface and requires a supply voltage between 3.135 V and 3.465 V. It is housed in a 119-pin PBGA package measuring 14x22 mm. The component supports surface mount installation and functions within a temperature range of -40°C to +85°C.
Feature Summary
- Supports high-speed synchronous burst operations for efficient data transfer
- Integrates self-timed write cycles with global write control capabilities
- Offers flexible power management through controlled power-down modes
Applications
- High-performance computing systems requiring fast memory access
- Network infrastructure equipment utilizing synchronous data processing
- Industrial automation controllers demanding reliable volatile storage
Procurement Notes
Verify current availability status as the component may be subject to end-of-life notices or limited distribution channels. Confirm package authenticity and check for RoHS compliance requirements specific to your region. Ensure that the supplier provides valid traceability documentation for this specific part number before finalizing any acquisition plans.
Selection Notes
Select this component when a 36-bit wide data bus is required for system architecture compatibility. Consider the 119-pin BGA footprint for PCB layout constraints and thermal management needs. Evaluate the 8.5 ns access speed against system timing requirements to ensure synchronization with the host processor's clock domain without introducing latency penalties.
Part Context
This SRAM belongs to the 71V3577 family, designed for applications needing wide data paths and synchronous operation. It serves as a high-density volatile memory solution within Renesas' portfolio, bridging the gap between standard SRAMs and specialized cache memories. The technology emphasizes low power consumption while maintaining high throughput for complex data handling tasks.
Replacement Considerations
Check for direct substitutes such as the IDT71V3577 series variants. Verify pinout compatibility and electrical specifications before substituting. Consult official manufacturer change notices for any updated packaging or substrate modifications.
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