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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:87 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:8.5 ns
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Overview
The 71V3577S85BG8 is a synchronous static random-access memory (SRAM) device manufactured by Renesas Electronics. It features a storage capacity of 4 Mbit, organized as 128K x 36 bits. The component supports a maximum clock frequency of 87 MHz with an access time of 8.5 ns. It operates on a 3.3V power supply, with voltage limits ranging from 3.135V to 3.465V and a maximum current consumption of 180 mA. The device utilizes a parallel interface and is housed in a 119-pin PBGA package measuring 14x22 mm. It functions within a commercial temperature range of 0°C to +70°C.
Feature Summary
- Supports synchronous single data rate (SDR) operation for high-speed data transfer
- Provides flow-through output architecture for direct data availability
- Includes boundary scan JTAG interface compliant with IEEE 1149.1 standards
Applications
- High-performance computing systems requiring fast memory access
- Network infrastructure equipment utilizing synchronous SRAM
- Industrial control systems operating within commercial temperature ranges
Procurement Notes
Verify component authenticity through authorized channels due to end-of-life status. Confirm moisture sensitivity level (MSL 3) handling requirements during storage and assembly. Check RoHS compliance documentation as the part may not meet current environmental regulations. Validate pin compatibility and electrical specifications against target design requirements before integration.
Selection Notes
Select this component for applications requiring 128K x 36 organization and 8.5 ns access speed. Ensure system design accommodates 3.3V I/O levels and 119-pin PBGA footprint. Consider thermal management for 180 mA peak current draw. Verify that synchronous SDR timing constraints align with processor bus interfaces.
Part Context
This device belongs to the 71V3577S85 family of synchronous SRAMs. It shares architectural similarities with other parts in the series but differs in specific organization and package options. The BG8 suffix denotes the 119-pin PBGA package variant. Related models include variants with different access times or organizational structures within the same product line.
Replacement Considerations
Public confirmed substitute part numbers: IDT71V3577S85BG8.
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