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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:87 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:8.5 ns
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Overview
The Renesas Electronics Corporation 71V3577S85BQ8 is a synchronous single data rate static random access memory with a total storage capacity of 4.5 Mbit, organized as 128K x 36 bits. It operates within a supply voltage range of 3.135 V to 3.465 V and supports a maximum clock frequency of 87 MHz with an access time of 8.5 ns. The device utilizes a parallel interface and is housed in a 165-CABGA package measuring 13x15 mm. It functions reliably across an operating temperature range of 0°C to +70°C.
Feature Summary
- Supports synchronous burst mode operations for high-speed data transfer
- Includes global write control and byte write enable capabilities
- Features power-down functionality controlled by the ZZ input pin
Applications
- High-performance embedded systems requiring fast memory access
- Industrial equipment real-time processing engines
- Network infrastructure hardware components
Procurement Notes
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements as the part may not meet current environmental standards. Check moisture sensitivity level handling procedures before assembly. Validate package dimensions against existing PCB footprints to ensure mechanical compatibility during replacement or maintenance projects.
Selection Notes
Consider the 165-CABGA package constraints when designing new layouts. Evaluate thermal management needs given the maximum power consumption specifications. Assess system timing requirements against the 8.5 ns access time limit. Ensure voltage regulators provide stable output within the specified 3.135 V to 3.465 V window for reliable operation.
Part Context
This component belongs to the 71V3577 series of synchronous SRAM devices designed for demanding applications. The series offers various speed grades and package options to suit different performance and form factor requirements. It represents a specialized memory solution for systems needing rapid data retrieval and low latency processing capabilities.
Replacement Considerations
ISSI IS64LF12836EC-7.5B3LA3 is listed as a potential substitute.
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