71V3577S85BQG8

Overview

The Renesas Electronics Corporation 71V3577S85BQG8 is a synchronous single data rate static random access memory (SRAM) device. It features a storage capacity of 4.5 Mbit, organized as 128K x 36 bits. The component supports a maximum clock frequency of 87 MHz with an access time of 8.5 ns. It operates on a 3.3V core supply voltage and utilizes 3.3V I/O levels. The interface type is parallel, and it is housed in a 165-CABGA package.

Feature Summary

• Supports synchronous burst mode operations for high-speed data transfer
• Includes self-timed write cycles with global write control capabilities
• Features power-down functionality controlled by the ZZ input pin

Applications

• High-performance computing systems requiring fast memory access
• Industrial equipment real-time engine applications
• Network infrastructure hardware components

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements as the specific variant may not meet current environmental standards. Check for moisture sensitivity level handling procedures during storage and assembly. Validate pin compatibility with existing PCB footprints before procurement.

Selection Notes

Select this component for designs requiring 36-bit wide data interfaces and synchronous operation. Ensure system timing constraints align with the 8.5 ns access time specification. Consider the 165-CABGA package dimensions for mechanical integration. Evaluate thermal management needs based on the specified operating temperature range.

Part Context

This SRAM belongs to the 71V3577 family of synchronous flow-through memories. It is designed for applications demanding high bandwidth and low latency. The device integrates address, data, and control registers to manage burst sequences efficiently. It represents a solution for complex digital signal processing tasks.

Replacement Considerations

Public confirmed substitute part numbers include ISSI IS64LF12836EC-7.5B3LA3.