71V3577S85PFG

Overview

The Renesas Electronics Corporation 71V3577S85PFG is a synchronous static random-access memory (SRAM) device organized as 128K x 36, providing a total storage capacity of 4.5 Mbit. It operates with a maximum clock frequency of 87 MHz and features an access time of 8.5 ns. The component utilizes a parallel interface and requires a supply voltage between 3.135 V and 3.465 V. It is housed in a 100-pin TQFP package with dimensions of 14x14 mm. The device supports single data rate (SDR) operation and is designed for surface mount installation.

Feature Summary

• Supports burst mode operations offering four cycles of data for a single address to enhance system performance.
• Features self-timed write cycles controlled by global write control, byte write enable, and byte writes.
• Includes power-down functionality managed by the ZZ input pin to reduce active current consumption.

Applications

• High-performance embedded systems requiring fast synchronous memory access
• Network infrastructure equipment utilizing flow-through SRAM architectures
• Industrial control systems operating within standard commercial temperature ranges

Procurement Notes

Verify component authenticity through authorized distributors due to end-of-life status. Confirm RoHS compliance requirements as specific suffixes may vary. Check moisture sensitivity level handling procedures before assembly. Ensure replacement parts are sourced from verified suppliers to maintain signal integrity and operational reliability in critical applications.

Selection Notes

Select this component when a 128K x 36 organization is required for synchronous data buffering. The 8.5 ns access time suits high-speed processing tasks. Consider the 100-pin TQFP package for PCB layout constraints. Evaluate thermal management needs for the specified operating temperature range. Compare against asynchronous alternatives if clock synchronization is not feasible in the target design.

Part Context

This part belongs to the 71V3577S85 family of synchronous SRAMs manufactured by Renesas Electronics. The family includes variants with different packages such as BGA and fpBGA. These devices are characterized by their flow-through architecture and 3.3V I/O compatibility. The series is widely used in telecommunications and computing applications requiring reliable high-speed memory solutions.

Replacement Considerations

Public confirmed substitute part numbers include IDT71V3577S85PFGI8. Verify pinout compatibility and electrical specifications before substitution. Ensure the alternative component meets the same organizational density and timing requirements.