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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:87 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:8.5 ns
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Overview
The Renesas Electronics Corporation 71V3577S85PFGI8 is a static random access memory device organized as 128K x 36, providing a total storage capacity of 4 Mbit. It operates with an access time of 8.5 ns and supports a maximum clock frequency of 87 MHz. The component utilizes a parallel interface and functions within a supply voltage range of 3.135 V to 3.465 V. Designed for surface mount installation, it is housed in a 100-TQFP package measuring 14x14 mm. The device supports synchronous single data rate operations and is rated for industrial temperature ranges from -40°C to +85°C.
Feature Summary
- Supports synchronous burst mode operation offering four cycles of data for a single address presentation
- Features self-timed write cycles with global write control and byte write enable capabilities
- Includes optional boundary scan JTAG interface compliant with IEEE 1149.1 standards
- Provides power-down functionality controlled by the ZZ input pin
Applications
- High-performance embedded systems requiring fast data buffering
- Industrial equipment utilizing synchronous memory interfaces
- Network infrastructure components needing low-latency data access
- Automotive electronic control units with strict timing requirements
Procurement Notes
Verify component authenticity through authorized channels due to end-of-life status. Confirm moisture sensitivity level handling procedures are strictly followed during assembly. Check for RoHS compliance variations between manufacturing sites. Validate package dimensions against current design specifications to ensure mechanical fit. Review official product change notices for any substrate or labeling updates prior to integration.
Selection Notes
Select this component when a 128K x 36 organization is required for specific data bus widths. Ensure the design accommodates the 100-pin TQFP footprint and thermal characteristics. Verify that the system logic supports synchronous single data rate protocols. Confirm that the operating voltage range aligns with the 3.3V I/O requirements. Consider the end-of-life status and plan for long-term supply chain alternatives.
Part Context
This part belongs to the 71V3577S85 series of synchronous SRAMs manufactured by Renesas Electronics. It shares architectural similarities with other devices in the family but differs in package type and temperature rating. The PFGI8 suffix indicates a specific lead-free and tape-and-reel configuration suitable for automated assembly processes within the broader memory product line.
Replacement Considerations
IDT71V3577S85PFGI8 serves as a direct functional substitute under the IDT branding.
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