71V3578S133PFG

Overview

The 71V3578S133PFG is a static random access memory component manufactured by Renesas Electronics. It features a storage capacity of 4 Mbit with an organization of 256 k x 18. The device operates as a synchronous SRAM with a maximum clock frequency of 133 MHz and an access time of 4.2 ns. It utilizes a parallel interface and functions within a supply voltage range of 3.135 V to 3.465 V. The component is housed in a 100-TQFP package and supports surface mount installation.

Feature Summary

• Supports synchronous single data rate (SDR) operations for high-speed data transfer
• Provides independent port control for read and write cycles
• Features low standby power consumption through automatic power-down modes

Applications

• High-performance computing systems requiring fast memory access
• Network infrastructure equipment needing reliable data buffering
• Industrial automation controllers utilizing synchronous memory interfaces

Procurement Notes

Verify the specific suffix and package type against official Renesas documentation before ordering, as variations exist within the product family. Confirm current availability status directly with authorized distributors, as this component may be subject to end-of-life notices or limited stock conditions. Ensure compatibility with system voltage requirements and thermal management specifications during integration planning.

Selection Notes

Select this component when a 256k x 18 synchronous SRAM configuration is required for parallel bus architectures. Consider the 133 MHz operating speed and 4.2 ns access time for applications demanding rapid data retrieval. Evaluate the 100-TQFP package dimensions against available PCB space and ensure the 3.3V core voltage aligns with the target system's power distribution network constraints.

Part Context

This part belongs to the Renesas 71V3578 series of synchronous SRAM devices. These components are designed for embedded applications requiring non-volatile-like performance without the complexity of flash memory. The series typically offers various access speeds and organizational options to suit different bandwidth and density requirements in modern electronic designs.

Replacement Considerations

Consult official Renesas cross-reference guides for verified substitutes. Potential alternatives may include other members of the 71V35xx series with compatible pinouts and electrical characteristics. Verify that any replacement maintains the same 256k x 18 organization and synchronous interface protocol.