71V3578S133PFGI

71V3578S133PFGI

$8.93
  • Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:16badc09772a Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR
  • Memory Size:4.5Mbit
  • Memory Organization:256K x 18
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:100-LQFP
  • Supplier Device Package:100-TQFP (14x14)
  • Access Time:4.2 ns

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71V3578S133PFGI

Overview

The 71V3578S133PFGI is a 4 Mbit (256K x 18) synchronous static random-access memory (SRAM) manufactured by Renesas Electronics. It operates at a maximum clock frequency of 133 MHz with an access time of 4.2 ns. The device utilizes a parallel interface and requires a supply voltage between 3.135 V and 3.465 V. It is housed in a 100-TQFP package and supports an operating temperature range from -40°C to +85°C.

Feature Summary

  • Supports high-speed data transfer via a 133 MHz synchronous parallel interface.
  • Provides low-latency memory access with a 4.2 ns access time specification.
  • Operates within a standard industrial temperature range for robust performance.

Applications

  • High-performance computing systems requiring fast data buffering
  • Network infrastructure equipment utilizing synchronous memory interfaces
  • Industrial control systems operating in extended temperature environments

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific lot traceability prior to acquisition. Ensure the procurement source provides valid documentation regarding the end-of-life status and final purchase order deadlines associated with this discontinued part number.

Selection Notes

Select this component when a 256K x 18 organization is required for synchronous applications. Ensure the design accommodates the 100-TQFP footprint and 3.3V power domain. Verify that the system timing constraints align with the 4.2 ns access speed and 133 MHz clock capability for optimal integration.

Part Context

This part belongs to the Renesas 71V3578 series of synchronous SRAMs, designed for high-throughput data processing tasks. It represents a specific speed grade variant within the broader family of 3.3V synchronous memories, offering a balance of density and speed for embedded storage needs.

Replacement Considerations

Consult official Renesas documentation for confirmed substitute part numbers. Evaluate alternatives based on identical pinout compatibility, voltage levels, and access times to ensure seamless hardware migration without circuit redesign.

FAQ

What is the memory organization of the 71V3578S133PFGI?

The memory is organized as 256K words by 18 bits, totaling 4 Mbits of storage capacity.

Is this component suitable for industrial temperature ranges?

Yes, the device is rated for operation from -40°C to +85°C, making it suitable for industrial applications.

71V3578S133PFGI71V3578S133PFGI
$8.93
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