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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 100TQFP
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:256K x 18
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x20)
- Access Time:4.2 ns
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Overview
The IDT71V3578YS133PF is a high-speed synchronous SRAM manufactured by Renesas Electronics Corporation, organized as 256K x 18 bits for a total capacity of 4.5 Mbit. It operates with a maximum clock frequency of 133 MHz and features a typical access time of 4.2 ns. The device utilizes a parallel interface and requires a supply voltage between 3.135 V and 3.465 V. It is housed in a 100-pin TQFP package (14x20 mm) and supports surface mount installation. The component is designed for commercial temperature ranges from 0°C to 70°C.
Feature Summary
- Supports high system speed with pipelined outputs and single-cycle deselect capability
- Features self-timed write cycles controlled by global write control and byte write enables
- Includes an internal burst address counter for sequential data access
Applications
- High-performance cache memory systems
- Network infrastructure equipment requiring fast data buffering
- Industrial control systems needing reliable synchronous storage
Procurement Notes
Verify the specific suffix 'YS133PF' against current manufacturer documentation to confirm pinout and electrical specifications, as Renesas has acquired IDT product lines. Check RoHS compliance status, as older batches may not meet current environmental standards. Confirm availability through authorized distributors, noting that this part number may be discontinued or superseded by newer revisions.
Selection Notes
Select this component when a 256K x 18 organization is required for wide-data bus applications. Ensure the design accommodates the 100-pin TQFP footprint and 3.3V power domain. Consider thermal management for the 0°C to 70°C operating range if used in enclosed industrial enclosures without active cooling.
Part Context
This device belongs to the IDT71V3576/78 family of 3.3V Synchronous SRAMs. The family includes variants with different memory organizations, such as 128K x 36 for the 71V3576 model. These components are engineered for applications demanding low latency and high throughput, utilizing ZBT (Zero Bus Turnaround) technology to maximize bandwidth efficiency.
Replacement Considerations
Public confirmed substitute part numbers include IS61LPS25618A-200TQLI from ISSI. Verify pin compatibility and timing parameters before substitution.
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