71V3578YS133PFG

Overview

The IDT71V3578YS133PFG is a high-speed synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a memory organization of 256K words by 18 bits, providing a total storage capacity of 4.5 megabits. The device operates with a maximum clock frequency of 133 MHz and supports a data access time of 4.2 nanoseconds. It utilizes a parallel interface and requires a supply voltage ranging from 3.135 volts to 3.465 volts. The component is housed in a 100-pin Thin Quad Flat Package (TQFP) measuring 14x20 mm, designed for surface-mount installation.

Feature Summary

• Supports high system speed with a 133 MHz clock frequency and 4.2 ns access time
• Features self-timed write cycles controlled by global write control and byte write enables
• Includes burst counter functionality supporting interleaved or linear burst modes
• Offers power-down capability controlled by the ZZ input pin

Applications

• High-performance computing systems requiring fast data retrieval
• Network infrastructure equipment utilizing synchronous SRAM interfaces
• Industrial control applications operating within commercial temperature ranges

Procurement Notes

Verify current manufacturing status as this part may be discontinued. Confirm RoHS compliance requirements against specific project standards, noting that some sources indicate non-compliance while others list it as compliant. Ensure the 100-TQFP package dimensions match the target PCB footprint. Validate that the 3.3V I/O logic levels are compatible with the host system's voltage domain before integration.

Selection Notes

Select this component when a 256K x 18 configuration is required for synchronous memory applications. It is suitable for designs needing 133 MHz operation speeds with pipelined outputs. Consider the 100-pin TQFP package constraints for board space. Verify compatibility with burst mode requirements if sequential data access is necessary for the specific application workload.

Part Context

This device belongs to the IDT 71V3578 series of high-speed synchronous SRAMs. It shares architectural similarities with the IDT71V3576, differing primarily in memory organization (256K x 18 versus 128K x 36). Both parts utilize the same 100-pin plastic thin quad flatpack packaging and support similar 3.3V core and I/O specifications within the same family of pipeline output memories.

Replacement Considerations

Publicly confirmed substitute part numbers include IS61LPS25618A-200TQLI from Integrated Silicon Solution Inc.