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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:256K x 18
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x20)
- Access Time:6.5 ns
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Overview
The 71V3579S65PFG8 is a synchronous single data rate static random-access memory integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 4.5 megabits, organized as 256 kilowords by 18 bits. The device supports parallel interface operations with an access time of 6.5 nanoseconds and a maximum clock frequency of 87 MHz. It operates within a supply voltage range of 3.135 to 3.465 volts and is housed in a 100-pin thin quad flat package measuring 14 by 14 millimeters.
Feature Summary
- Supports synchronous burst mode operation for high-speed data transfer
- Includes self-timed write cycles with global write control and byte write enable capabilities
- Features power-down functionality controlled by dedicated input pins
Applications
- High-performance computing systems requiring fast memory access
- Network infrastructure equipment utilizing parallel SRAM interfaces
- Industrial control systems needing reliable volatile memory storage
Procurement Notes
Verify the specific suffix PFG8 against official Renesas documentation to confirm pin compatibility and package dimensions. Ensure that the 6.5 ns speed grade matches system timing requirements. Confirm RoHS compliance status through current datasheets as manufacturing processes may evolve. Check for obsolescence notices or lifecycle changes before finalizing procurement plans.
Selection Notes
Select this component when a 256K x 18 organization is required for synchronous applications. The 6.5 ns access time suits designs demanding faster throughput than standard variants. Consider the 100-TQFP package for surface-mount assembly constraints. Evaluate power consumption profiles against system thermal limits given the 3.3V core voltage specification.
Part Context
This part belongs to the 71V3579 family of 3.3V CMOS synchronous SRAMs. The family offers various speed grades and packaging options to accommodate different performance and form factor needs. The 71V3579 series is designed for applications requiring high-density memory with low latency and flexible burst mode configurations.
Replacement Considerations
The 71V3579S65PFG is listed as a direct replacement. Verify electrical parameters and pinout compatibility before substitution.
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