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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:256K x 18
- Memory Interface:Parallel
- Clock Frequency:117 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:7.5 ns
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Overview
The 71V3579S75PFGI8 is a 4.5Mb (256K x 18) synchronous single data rate SRAM manufactured by Renesas Electronics Corporation. It operates with a maximum clock frequency of 117 MHz and features an access time of 7.5 ns. The device utilizes a parallel interface and is supplied in a 100-TQFP (14x14) surface-mount package. It requires a core power supply voltage range of 3.135V to 3.465V and supports an operating temperature range from -40°C to +85°C.
Feature Summary
- Supports burst mode operations including interleaved or linear modes selectable via the LBO input.
- Features self-timed write cycles controlled by global write control, byte write enable, and individual byte writes.
- Includes power-down functionality managed by the ZZ input pin.
Applications
- High-performance embedded systems requiring fast memory access
- Network infrastructure equipment
- Industrial automation controllers
Procurement Notes
Verify component authenticity through authorized Renesas distributors. Confirm RoHS compliance status as it varies by production batch. Check for moisture sensitivity level requirements during storage and handling. Ensure the specific suffix matches the required package and temperature grade. Validate lead times due to potential manufacturing changes.
Selection Notes
Select this component for designs needing high-speed synchronous memory with wide data bus width. Compare against asynchronous alternatives if lower power consumption at idle is critical. Verify that the system logic supports the required burst mode configurations. Ensure voltage levels match the 3.3V I/O specification.
Part Context
This part belongs to the 71V3579 family of 3.3V CMOS SRAMs. It shares architectural similarities with other members like the 71V3577 and 71V3579S85, differing primarily in speed grades and organization. The family is designed for applications demanding reliable, high-throughput data buffering.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Users should consult Renesas official resources for current equivalent recommendations.
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