71V3579S80PFG8

Overview

The 71V3579S80PFG8 is a Synchronous Single Data Rate (SDR) Static Random Access Memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 4.5 Megabits, organized as 256K words by 18 bits per word. The device features a parallel interface and operates with a maximum clock frequency of 87 MHz, achieving an access time of 8.5 nanoseconds. It requires a supply voltage range between 3.135V and 3.465V and is designed for commercial operation within a temperature range of 0°C to 70°C. The component is housed in a 100-pin Thin Quad Flat Package (TQFP) measuring 14x14 mm.

Feature Summary

• Supports synchronous data transfer via a single data rate parallel interface architecture
• Provides high-speed memory access with an 8.5 ns access time at 87 MHz clock rates
• Utilizes a 100-pin TQFP surface-mount package for compact board integration

Applications

• High-performance embedded systems requiring fast random access memory
• Industrial control equipment needing reliable volatile data storage
• Telecommunications infrastructure utilizing synchronous SRAM interfaces

Procurement Notes

Verify the exact suffix PFG8 against official Renesas documentation to confirm pinout compatibility and RoHS status. Confirm current production status as some variants in this series may be obsolete. Ensure the 3.3V I/O logic levels match the target system requirements. Validate the 100-TQFP physical dimensions against the PCB footprint design specifications before finalizing procurement.

Selection Notes

Select this component when a 4.5Mb synchronous SRAM with an 18-bit data width is required. The 8.5 ns access time suits applications demanding moderate-to-high speed data buffering. Ensure the design supports the specific 3.135V to 3.465V voltage range. Consider the 100-pin TQFP package constraints during layout planning compared to other available package options in the 71V3579 family.

Part Context

This part belongs to the Renesas 71V3579 family of synchronous SRAM devices. These components are engineered for applications requiring fast, reliable volatile memory with parallel interface capabilities. The family typically offers various speed grades and package options to accommodate different performance and form factor requirements in industrial and commercial electronic designs.

Replacement Considerations

Direct substitutes include IDT71V3579S85PFG and 71V3579S85PFG. Verify electrical parameters and pin compatibility before replacement.