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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:256K x 18
- Memory Interface:Parallel
- Clock Frequency:100 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:8 ns
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Overview
The IDT71V3579S80PFGI is a high-speed synchronous SRAM organized as 256K x 18 bits, providing a total memory capacity of 4.5 Mbit. It operates with a maximum access time of 8 ns and utilizes a 3.3 V supply voltage with 3.3 V I/O levels. The device features a flow-through output architecture without registers in the data path, supporting burst operations via an internal counter. It is housed in a 100-pin Thin Quad Flat Package (TQFP) suitable for surface-mount applications.
Feature Summary
- Flow-through architecture eliminates output register latency for direct data availability
- Internal burst address counter enables sequential data access from a single initial address
- Self-timed write logic allows flexible write cycle termination
Applications
- High-performance cache memory systems
- Network routing and switching equipment buffers
- Telecommunications base station signal processing
Procurement Notes
Verify the specific suffix PFGI to confirm the package type and lead-free status. Ensure compatibility with 3.3 V logic levels in the target system design. Confirm RoHS compliance requirements against current manufacturing standards. Check for any recent product change notices regarding pinout or electrical specifications.
Selection Notes
Select this component when low-latency data retrieval is critical and pipeline delays are undesirable. The flow-through interface simplifies timing analysis compared to pipelined alternatives. Consider the 256K x 18 organization for wide-data bus applications requiring moderate density. Evaluate power consumption characteristics relative to system thermal constraints.
Part Context
This part belongs to the IDT 71V3577/79 family of synchronous SRAMs. The 71V3579 variant specifically offers the 256K x 18 configuration, while the 71V3577 provides a 128K x 36 organization. Both share identical electrical characteristics and interface protocols, differing primarily in memory density and width.
Replacement Considerations
Direct substitutes include other members of the 71V357x series with compatible pinouts. Verify that alternative sources maintain the same 8 ns speed grade and 3.3 V operating voltage. Ensure the replacement package matches the 100-TQFP form factor for board compatibility.
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