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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:256K x 18
- Memory Interface:Parallel
- Clock Frequency:100 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:8 ns
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Overview
The 71V3579S80PFGI8 is a 3.3V synchronous SDR SRAM IC manufactured by Renesas Electronics Corporation. It features a memory organization of 256K x 18, providing a total capacity of 4.5Mb. The device supports parallel interface operations with an access time of 8 ns and a maximum clock frequency of 87 MHz. It operates within a supply voltage range of 3.135V to 3.465V and is housed in a 100-TQFP (14x14) surface-mount package. The component is designed for industrial temperature ranges, functioning between 0°C and 70°C.
Feature Summary
- Supports interleaved or linear burst mode selection via LBO input
- Features self-timed write cycles with global write control and byte write capabilities
- Includes power-down functionality controlled by the ZZ input
Applications
- High-performance data buffering systems
- Network communication equipment requiring fast access times
- Industrial control applications utilizing 3.3V logic interfaces
Procurement Notes
Verify the specific suffix PFGI8 against official Renesas documentation to confirm package type and temperature grade. Confirm availability status as distribution channels may list obsolete or end-of-life variants. Ensure compatibility with 3.3V I/O requirements and check for moisture sensitivity handling instructions prior to assembly.
Selection Notes
Select this component when a 4.5Mb synchronous SRAM with 18-bit width is required. It is suitable for designs needing 8 ns access speeds at up to 87 MHz. Consider the 100-pin TQFP footprint for PCB layout constraints. Verify that the 3.3V core and I/O specifications align with the system's power architecture.
Part Context
This part belongs to the 71V3579 series of 3.3V CMOS SRAMs. The series is characterized by high-speed performance and flexible burst mode options. It utilizes standard parallel interface protocols common in synchronous memory applications. The device integrates address, data, and control registers to manage data flow efficiently.
Replacement Considerations
Check for IDT71V3579S80PFGI8 as a potential equivalent from the same manufacturer lineage. Verify pinout and electrical parameter compatibility before substitution.
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