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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:256K x 18
- Memory Interface:Parallel
- Clock Frequency:87 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:8.5 ns
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Overview
The 71V3579S85PFG is a synchronous SDR SRAM IC manufactured by Renesas Electronics Corporation. It features a storage capacity of 4.5Mb organized as 256K x 18 bits with a parallel interface. The device supports a clock frequency of 87 MHz and offers an access time of 8.5 ns. It operates within a supply voltage range of 3.135V to 3.465V and functions at temperatures between 0°C and 70°C. The component is housed in a 100-TQFP (14x14) surface-mount package.
Feature Summary
- Supports burst mode operations providing four cycles of data for a single address presentation.
- Includes self-timed write cycles controlled by global write control, byte write enable, and byte writes.
- Features power-down functionality managed by the ZZ input pin.
Applications
- High-performance embedded systems requiring fast memory access
- Network infrastructure equipment
- Industrial automation controllers
Procurement Notes
Verify the exact suffix against official Renesas documentation, as variations like PFGI or PFG8 may indicate different temperature ranges or packaging types. Confirm RoHS compliance status and current production lifecycle stage directly with the manufacturer or authorized distributors before procurement.
Selection Notes
Select this component when a 256K x 18 organization is required with synchronous parallel interface capabilities. Ensure the design accommodates the 3.3V core voltage and 100-pin TQFP footprint. Consider thermal management for the specified operating temperature range during integration.
Part Context
This part belongs to the 71V3579 series of synchronous SRAMs from Renesas. It shares architectural similarities with other devices in the family but is distinct in its specific pinout, speed grade, and package configuration designed for high-density memory applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative vendors such as ISSI if cross-referencing is necessary.
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