71V3579S85PFG

Overview

The IDT71V3579S85PFG is a high-speed synchronous SDR SRAM organized as 256K x 18, providing a total storage capacity of 4.5Mb. It features an 8.5 ns access time and operates on a 3.3V power supply within the range of 3.135V to 3.465V. The device utilizes a parallel interface and is housed in a 100-TQFP (14x14) surface-mount package. It supports industrial operating temperatures from -40°C to 85°C.

Feature Summary

• Supports high-performance system speeds through synchronous single data rate architecture
• Features internal logic for self-timed write cycles based on end-of-cycle decisions
• Includes an internal burst address counter for four-word burst capability

Applications

• High-speed cache memory systems
• Buffer applications requiring fast data throughput
• Industrial embedded control systems

Procurement Notes

Verify component authenticity due to potential obsolescence status. Confirm RoHS compliance requirements as specific suffixes may vary. Validate package dimensions against PCB footprint specifications. Ensure voltage levels match system design constraints before integration.

Selection Notes

Select this component for designs requiring 18-bit data width and synchronous timing. Compare access times with alternative models if higher speed is needed. Verify temperature range suitability for the intended operational environment. Check pin compatibility with existing board layouts.

Part Context

This part belongs to the IDT71V3577/79 family of 3.3V synchronous SRAMs. These devices are designed for applications demanding high bandwidth and low latency. The family shares common architectural features such as flow-through outputs and burst counters.

Replacement Considerations

IS61LF25618A-7.5TQLI and IS61LF25618EC-7.5TQLI are listed as similar alternatives by ISSI.