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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:256K x 18
- Memory Interface:Parallel
- Clock Frequency:87 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:8.5 ns
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Overview
The Renesas 71V3579S85PFGI is a 4.5Mb (256K x 18) synchronous single data rate static random-access memory IC. It features a parallel interface with an access time of 8.5 ns and operates at a clock frequency of 87 MHz. The device utilizes a 100-pin TQFP package (14x14 mm). Power supply voltage ranges from 3.135V to 3.465V, and it supports surface mount installation. Operating temperature spans -40°C to 85°C.
Feature Summary
- Supports burst mode for high-performance sequential data access
- Includes self-timed write cycle with global write control
- Features power-down capability controlled by ZZ input
Applications
- High-speed digital signal processing systems
- Network infrastructure equipment requiring fast memory access
- Industrial control systems with strict timing requirements
Procurement Notes
Verify component authenticity through authorized distributors due to end-of-life status. Confirm RoHS compliance details as sources vary. Check moisture sensitivity level handling requirements during assembly. Validate pinout compatibility with existing PCB layouts before procurement.
Selection Notes
Select this model for applications requiring 18-bit data width and synchronous operation. Ensure system voltage matches the 3.3V nominal range. Consider thermal management for the TQFP package in enclosed environments. Verify that the 8.5 ns access time meets system latency specifications.
Part Context
Part of the 71V3579 series of 3.3V CMOS SRAMs. Designed for flow-through operation with linear or interleaved burst modes. Manufactured by Renesas Electronics Corporation, formerly IDT. Commonly used in embedded systems requiring reliable volatile memory storage.
Replacement Considerations
IS61LF25618A-7.5TQLI and IS61LF25618EC-7.5TQLI are listed as similar alternatives. Verify electrical parameter compatibility and pin configuration before substitution.
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