71V3579S85PFI

71V3579S85PFI

$1.84
  • Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:IDT, Integrated Device Technology Inc
  • Package:Bulk

SKU:914cc8ce188e Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:IDT, Integrated Device Technology Inc
  • Package:Bulk
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR
  • Memory Size:4.5Mbit
  • Memory Organization:256K x 18
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:100-LQFP
  • Supplier Device Package:100-TQFP (14x14)
  • Access Time:8.5 ns

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71V3579S85PFI

Overview

The IDT71V3579S85PFI is a 4.5Mb (256K x 18) synchronous SDR SRAM IC manufactured by Renesas Electronics Corporation. It features an 8.5 ns access time and operates on a parallel interface. The device supports a supply voltage range of 3.135V to 3.465V and functions within a temperature range of -40°C to 85°C. It is housed in a 100-TQFP (14x14) surface-mount package.

Feature Summary

  • Synchronous Single Data Rate architecture for high-speed data transfer
  • Parallel memory interface supporting standard system integration
  • Industrial temperature rating for extended operational environments

Applications

  • High-performance embedded systems requiring fast random access memory
  • Network infrastructure equipment utilizing synchronous logic
  • Industrial control units operating in wide temperature ranges

Procurement Notes

Verify component authenticity through authorized distributors, as the part may be discontinued or subject to product change notices. Confirm RoHS compliance status and specific manufacturing lot dates against current Renesas documentation before procurement. Ensure packaging specifications match design requirements.

Selection Notes

Select this component when a 256K x 18 organization with 8.5 ns latency is required. Ensure the design accommodates the 3.3V nominal supply voltage and 100-pin TQFP footprint. Verify that the synchronous SDR interface aligns with the host controller's timing constraints and bus architecture.

Part Context

This device belongs to the IDT 71V3579 family of synchronous SRAMs. It provides non-volatile-like speed with volatile storage characteristics. The part is produced under Renesas Electronics Corporation following the acquisition of IDT assets. It serves as a specialized memory solution for applications demanding deterministic access times.

Replacement Considerations

IS61LF25618A-7.5TQLI from ISSI is listed as a similar alternative. Direct substitutes such as 71V3579S65PFG are available from Renesas. Verify pin compatibility and electrical parameters before substitution.

71V3579S85PFI71V3579S85PFI
$1.84
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