71V3579YS85PF

Overview

The IDT71V3579YS85PF is a Synchronous Burst SRAM with a capacity of 4.5 Mbit, organized as 256K x 18. It operates at a clock frequency of 87 MHz with an access time of 8.5 ns. The device uses a parallel interface and requires a supply voltage between 3.135V and 3.465V. It is housed in a 100-TQFP (14x14) package and supports a commercial operating temperature range of 0°C to 70°C.

Feature Summary

• Synchronous Single Data Rate (SDR) architecture for high-speed data transfer
• Integrated burst counter for sequential memory operations
• Single cycle deselect capability for flexible bus control
• Flow-through output mode for low-latency access

Applications

• High-performance embedded systems requiring fast random access
• Network infrastructure equipment needing low-latency buffering
• Industrial control systems utilizing synchronous memory interfaces

Procurement Notes

Verify component authenticity through authorized Renesas or IDT distributors due to potential counterfeit risks. Confirm RoHS compliance status as some listings indicate non-compliance. Ensure the specific suffix matches required thermal and electrical specifications before ordering.

Selection Notes

Select this part for applications demanding synchronous burst access with flow-through outputs. Compare against pipelined variants if lower latency is critical. Verify package compatibility with existing PCB footprints and ensure voltage levels match system requirements.

Part Context

This component belongs to the IDT 71V3579 family of Synchronous ZBT SRAMs. It represents a standard density option within the series, designed for general-purpose high-speed memory applications. The manufacturer transitioned from IDT to Renesas Electronics during corporate restructuring.

Replacement Considerations

Direct substitutes include IDT71V3579S65PFG. Alternative similar parts from ISSI include IS61LF25618A-7.5TQLI. Verify pinout and timing parameters when cross-referencing.