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Product Detailed Parameters
- Description:IC SRAM 4MBIT PARALLEL 48CABGA
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:256K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:10ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:48-TFBGA
- Supplier Device Package:48-CABGA (9x9)
- Access Time:10 ns
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Overview
The IDT71V416L10BE is a high-speed Static RAM organized as 256K x 16, providing a total storage capacity of 4 Mbit. It operates with a maximum access time of 10 ns and supports parallel interface communication. The device functions within a supply voltage range of 3.0 V to 3.6 V, with a maximum power consumption of 180 mA. It is housed in a 48-CABGA package measuring 9x9 mm and is rated for commercial operating temperatures between 0°C and +70°C.
Feature Summary
- High-performance CMOS fabrication ensures reliability and speed
- Asynchronous operation allows flexible system integration
- Parallel interface supports standard data bus architectures
Applications
- Embedded systems requiring fast local memory
- Industrial control units needing reliable data storage
- Telecommunications equipment buffer applications
Procurement Notes
Verify the specific package variant, as the L10 suffix typically denotes TSOP-44 while BE denotes CABGA-48. Confirm RoHS compliance status directly with the manufacturer or authorized distributor documentation. Ensure the ordering part number matches the required pinout and physical dimensions for your PCB design. Check for moisture sensitivity levels if reflow soldering is planned.
Selection Notes
Select this component when a 256K x 16 organization is required with 10 ns access speeds. Compare against other members of the 71V416 family for different package options like SOJ or BGA. Ensure the 3.3V logic level compatibility matches your system's I/O standards. Consider thermal dissipation requirements given the 180 mA maximum current draw in active states.
Part Context
This part belongs to the IDT71V416S/L series of asynchronous SRAMs. It shares architectural similarities with variants such as the 71V416L10PHG and 71V416L10BEG. The series is designed for general-purpose high-speed memory applications using CMOS technology. Renesas Electronics now produces these parts following the acquisition of IDT's memory business.
Replacement Considerations
Direct substitutes include IDT71V416L10BEG and IDT71V416L10BEI. Cross-reference with Renesas 71V416L10PHG for equivalent electrical specifications but verify package differences between CABGA and TSOP formats.
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