71V416L10BE

Overview

The IDT71V416L10BEI is a 4Mbit (256K x 16) asynchronous static random-access memory manufactured by Renesas Electronics. It features a parallel interface with a maximum access time of 10ns and operates within a supply voltage range of 3.0V to 3.6V. The device is housed in a 48-lead TFBGA package, specifically designated as 48-CABGA (9x9). It supports surface mount installation and functions reliably across an industrial temperature range of -40°C to +85°C.

Feature Summary

• Asynchronous parallel SRAM architecture for high-speed data buffering
• Industrial-grade thermal stability for demanding environments
• Compact low-profile surface-mount packaging

Applications

• Industrial equipment control systems
• Automotive embedded applications
• High-performance computing buffers

Procurement Notes

Verify the complete part number suffix, typically 'EI' for this configuration, against official Renesas documentation. Confirm the specific package variant matches the required PCB footprint. Check current product status as availability may vary due to lifecycle changes.

Selection Notes

Select based on the required 10ns access speed and 48-pin TFBGA form factor. Ensure the design accommodates the specified 3.0V to 3.6V power supply constraints. Verify that the industrial temperature rating aligns with the operational environment requirements.

Part Context

This component belongs to the 71V416L series of asynchronous SRAMs from Renesas. It provides non-volatile-like performance with volatile storage characteristics, designed for applications requiring fast read/write cycles and robust data retention during active operation.

Replacement Considerations

Consult official Renesas substitution guides for verified alternatives. Cross-reference pinouts and electrical specifications before considering any third-party equivalents.