71V416L10BEI

Overview

The IDT 71V416L10BEI is a standard CMOS SRAM integrated circuit with a 4Mbit capacity organized as 256K words by 16 bits. It operates at a supply voltage of 3.3V and features an asynchronous parallel interface with a 10 ns access time. The component is housed in a 48-pin CABGA package measuring 9x9 mm and supports an operating temperature range of -40°C to 85°C.

Feature Summary

• High-speed asynchronous static random-access memory architecture
• Standard CMOS fabrication for high reliability
• Single 3.3V power supply operation

Applications

• Industrial automation systems
• Process automation control units
• Electronic components requiring moderate storage capacity

Procurement Notes

Verify the specific suffix 'BEI' against official IDT documentation to confirm pinout, voltage, and temperature ratings match your design requirements. Ensure the 48-CABGA package dimensions are compatible with your PCB footprint. Confirm that the asynchronous interface timing aligns with your system controller specifications before finalizing procurement.

Selection Notes

Select this component when a 4Mbit non-volatile-free storage solution is required for 3.3V logic systems. The 10 ns speed suits applications needing fast data retrieval without complex synchronization. Consider the 48-pin BGA form factor for space-constrained designs where surface-mount assembly is preferred over through-hole technology.

Part Context

This part belongs to the IDT 71V416 family of high-speed Static RAMs. These devices are fabricated using high-performance CMOS technology designed for demanding electronic applications. The family typically offers various speed grades and packaging options to accommodate different system performance and physical layout constraints.

Replacement Considerations

Check for direct cross-references from IDT or Renesas. Verify compatibility of 256K x 16 organization and 3.3V operation. Ensure the replacement maintains the 48-pin CABGA package and 10 ns access time specifications.