71V416L10PHG8

Overview

The Renesas Electronics Corporation 71V416L10PHG8 is a 4 Mbit (256K x 16) asynchronous static random-access memory (SRAM). It operates on a single 3.3V supply with a voltage range of 3.0V to 3.6V. The device features a 10 ns access time and a maximum power supply current of 180 mA. It utilizes a parallel interface and is housed in a 44-pin TSOP II package. The component supports surface-mount installation and functions within an operating temperature range of 0°C to +70°C.

Feature Summary

• Fully static asynchronous circuitry requiring no clocks or refresh cycles for operation
• Bidirectional inputs and outputs are LVTTL-compatible
• Center power and ground pinout configuration

Applications

• General-purpose data storage in embedded systems
• Buffering applications in high-speed digital circuits
• Cache memory implementation in microcontroller-based designs

Procurement Notes

Verify the specific suffix 'PHG8' against official Renesas documentation to confirm lead-free status, moisture sensitivity level, and tray packaging details. Ensure compatibility with RoHS3 standards and check for any recent product change notices affecting assembly location or labeling before procurement.

Selection Notes

Select this component when a 256K x 16 organization is required with 10 ns speed at 3.3V. Consider the TSOP-44 package dimensions and center power/ground pinout for PCB layout. Verify that the industrial temperature range of 0°C to +70°C meets system requirements compared to extended temperature variants.

Part Context

This part belongs to the 71V416L series of 3.3V CMOS SRAMs from Renesas Electronics. It shares architectural similarities with other members like the 71V416S10PHG8 but differs in package type and potentially temperature rating. The series is designed for low-power, high-density static memory applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.