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Product Detailed Parameters
- Description:IC SRAM 4MBIT PARALLEL 44TSOP II
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:256K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:10ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package:44-TSOP II
- Access Time:10 ns
- Grade:-
- Qualification:-
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Overview
The Renesas Electronics 71V416L10PHGI8 is a 4 Mbit (256K x 16) asynchronous static random-access memory (SRAM) IC. It operates on a single 3.3V power supply with a voltage range of 3.0V to 3.6V and features a maximum access time of 10 ns. The device utilizes parallel interface technology and is housed in a 44-pin Thin Shrink Small Outline Package (TSOP II). It supports surface-mount installation and functions within an industrial temperature range of -40°C to +85°C, with a maximum supply current of 180 mA.
Feature Summary
- Fully static asynchronous circuitry requiring no clock signals or periodic refresh cycles for operation.
- Bidirectional inputs and outputs are LVTTL-compatible, ensuring direct interfacing with standard logic families.
- Center power and ground pinout configuration designed to minimize noise and improve signal integrity.
Applications
- Data buffering in high-speed digital systems
- Cache memory implementation in embedded controllers
- Industrial control system data storage
Procurement Notes
Verify the specific suffix 'GI8' against the manufacturer's latest documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with RoHS3 directives if required by your assembly process. Cross-reference the moisture sensitivity level (MSL 3) requirements during storage and handling to prevent damage before soldering.
Selection Notes
Select this component when a 256K x 16 organization is required with a 10 ns access speed. It is suitable for designs needing LVTTL compatibility and center-ground pinouts. Consider alternative speeds like 12 ns or 15 ns if lower power consumption is prioritized over speed, or verify if the S-series variant offers different electrical characteristics.
Part Context
This part belongs to the Renesas 71V416L series of 3.3V CMOS SRAMs. The series provides various access times and packaging options for general-purpose memory applications. The 71V416L10PHGI8 specifically denotes the 10 ns speed grade in a TSOP II package with reel packaging.
Replacement Considerations
The 71V416L12PHGI8 and 71V416L15PHGI8 are documented as similar substitutes within the same family, offering slower access times but maintaining compatible pinouts and functionality.
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