71V416L10YG

71V416L10YG

  • Description:IC SRAM 4MBIT PARALLEL 44SOJ
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:8c6a17e939d5 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 4MBIT PARALLEL 44SOJ
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:4Mbit
  • Memory Organization:256K x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:10ns
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package:44-SOJ
  • Access Time:10 ns
  • Grade:-
  • Qualification:-

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71V416L10YG

Overview

The Renesas Electronics 71V416L10YG is a 4 Mbit (256K x 16) asynchronous static random-access memory (SRAM) IC. It operates on a single 3.3V supply with a voltage range of 3.0V to 3.6V. The device features a 10 ns access time and utilizes parallel interface technology. It is housed in a 44-pin Small Outline J-Lead (SOJ) package, specifically the 44-BSOJ configuration measuring 10.16mm in width. The component supports surface-mount installation and functions within an operating temperature range of 0°C to +70°C.

Feature Summary

  • Fully static asynchronous circuitry requiring no clocks or refresh cycles for operation
  • LVTTL-compatible bidirectional inputs and outputs for direct logic interfacing
  • Center power and ground pinout design to optimize signal integrity

Applications

  • High-speed data buffering in embedded systems
  • Cache memory implementation in microcontroller-based designs
  • Industrial control system data storage

Procurement Notes

Verify RoHS compliance status as historical records indicate variations across production lots. Confirm moisture sensitivity level (MSL 3) handling requirements during assembly. Check for specific manufacturer part number aliases such as IDT71V416L10Y when sourcing equivalents. Ensure the selected package variant matches the required footprint dimensions for PCB layout compatibility.

Selection Notes

Select this component for applications requiring fast asynchronous access without clock synchronization. The 256K x 16 organization suits wide-data bus architectures. Consider the SOJ package constraints regarding board space and thermal dissipation compared to TSOP alternatives. Verify that the 3.3V logic levels align with the host system's I/O specifications.

Part Context

This SRAM belongs to the 71V416 series, which includes variants with different access speeds and temperature ranges. The 'L' designation typically indicates commercial temperature grading. The device represents legacy CMOS technology from the Renesas/IDT portfolio, often used in established industrial and communication equipment designs requiring reliable static memory.

Replacement Considerations

The 71V416L10PHG is a manufacturer-recommended alternative featuring a TSOP-44 package instead of SOJ. Other potential substitutes include the AS7C34098A-10JCN from Alliance Memory. Verify pinout compatibility and package dimensions before substituting.

71V416L10YG71V416L10YG

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