71V416L12BE

71V416L12BE

$5.84
  • Description:IC SRAM 4MBIT PARALLEL 48CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:6c60bda41a5e Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 4MBIT PARALLEL 48CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:4Mbit
  • Memory Organization:256K x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:12ns
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:48-TFBGA
  • Supplier Device Package:48-CABGA (9x9)
  • Access Time:12 ns
  • Grade:-
  • Qualification:-

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71V416L12BE

Overview

The Renesas Electronics Corporation 71V416L12BE is a 4 Mbit (256K x 16) asynchronous static random-access memory (SRAM) IC. It operates on a single 3.3 V power supply with a voltage range of 3.0 V to 3.6 V. The device features a maximum access time of 12 ns and a write cycle time of 12 ns. It utilizes a parallel interface and is housed in a 48-CABGA (9x9 mm) surface-mount package. The component supports an industrial operating temperature range from -40°C to +85°C.

Feature Summary

  • Fully static asynchronous circuitry requiring no clock or refresh cycles for operation.
  • Bidirectional inputs and outputs are LVTTL-compatible for direct logic interfacing.
  • Center power and ground pinout design to optimize signal integrity and reduce noise.

Applications

  • High-speed data buffering in embedded systems
  • Cache memory implementation in microcontroller units
  • Industrial control system data storage

Procurement Notes

Verify the specific suffix 'BE' against official Renesas documentation to confirm the exact package type, lead finish, and environmental compliance status. Cross-reference the datasheet revision date to ensure compatibility with current manufacturing standards. Confirm availability status as this part number may be subject to discontinuation notices.

Selection Notes

Select this component when a 256K x 16 organization is required with 12 ns access speed. Ensure the design accommodates the 48-CABGA footprint and 3.3 V supply constraints. Verify that LVTTL input/output levels match the system logic family. Consider thermal management within the specified -40°C to +85°C operational window.

Part Context

This SRAM belongs to the 71V416L series, which provides high-density static memory solutions for 3.3 V applications. The series is characterized by low power consumption and fast access times suitable for demanding digital processing tasks. It serves as a critical volatile memory component in various electronic architectures requiring rapid data read/write capabilities.

Replacement Considerations

Publicly confirmed substitute part numbers for 71V416L12BE are not available in the provided source material. Consult official Renesas channels for current obsolescence notices and approved alternative components.

71V416L12BE71V416L12BE
$5.84
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