71V416L12BE8

Overview

The Renesas Electronics Corporation 71V416L12BE8 is a high-speed asynchronous static random-access memory (SRAM) integrated circuit. It provides a total storage capacity of 4 Mbit, organized as 256K words by 16 bits. The device operates with a supply voltage range of 3.0 V to 3.6 V and features a maximum access time of 12 ns. It supports parallel interface communication and is designed for surface-mount installation. The component is available in a 48-CABGA package measuring 9x9 mm. It functions within an industrial temperature range of -40°C to +85°C.

Feature Summary

• Asynchronous parallel SRAM architecture providing fast data access without clock synchronization requirements
• High-density 4 Mbit storage capacity organized in a 256K x 16 bit configuration
• Industrial-grade operational reliability across extended temperature ranges from -40°C to +85°C

Applications

• Embedded systems requiring non-volatile-like speed with volatile storage characteristics
• Industrial control units operating in harsh environmental conditions
• Telecommunications equipment buffer memory applications

Procurement Notes

Verify the exact suffix BE8 against official Renesas documentation to confirm package type and temperature grade. Confirm RoHS compliance status and moisture sensitivity level prior to assembly. Check for end-of-life notices or production change notifications that may affect long-term availability. Ensure ordering specifications match the required lead times and packaging formats.

Selection Notes

Select this component when a 12 ns access time and 4 Mbit density are required for parallel bus architectures. Consider the 48-pin CABGA footprint for board layout constraints. Evaluate power consumption limits against system thermal design capabilities. Compare against other 71V416 series variants if different access speeds or package styles are preferred.

Part Context

This part belongs to the Renesas 71V416L series of asynchronous SRAMs. The series offers various access speeds and package options to suit different performance and form-factor requirements. These devices are commonly used in legacy and modern embedded designs needing fast, random-access memory solutions.

Replacement Considerations

Consult official substitution guides for compatible parts such as the 71V416L15BEI or 71V416S12YGI8. Verify pin compatibility and electrical parameter alignment before replacing. Note that some alternatives may have different access times or package dimensions.