71V416L12BEG

Overview

The IDT71V416L12BEG is a 4Mbit (256K x 16) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics. It operates with a supply voltage range of 3.0V to 3.6V and features a parallel interface. The device has an access time of 12ns and supports surface-mount installation in a 48-ball TFBGA package. It is rated for industrial temperature ranges from -40°C to +85°C.

Feature Summary

• Asynchronous parallel SRAM architecture providing non-volatile data retention during power loss.

Applications

Procurement Notes

Verify the manufacturer status, as IDT is now part of Renesas Electronics. Confirm the specific package type and temperature rating match the design requirements. Check for RoHS compliance status and any product change notices related to this obsolete or end-of-life component.

Selection Notes

Select this component for designs requiring high-speed asynchronous memory with a compact ball grid array footprint. Ensure the system voltage aligns with the 3.0V to 3.6V operating range. Consider the 12ns access speed for timing constraints in the target application circuit.

Part Context

This part belongs to the 71V416L series of high-performance SRAMs. It shares the 4Mbit capacity and 16-bit organization with other variants in the family, differing primarily in access speed and package configuration. The 'L' suffix typically denotes low-power characteristics within this product line.

Replacement Considerations

Compatible substitutes include IDT71V416L10BEG and IDT71V416L15BEG, which offer different access speeds but maintain the same pinout and functionality.