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71V416L12BEGI
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Product Detailed Parameters
- Description：IC SRAM 4MBIT PARALLEL 48CABGA
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tray
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：4Mbit
- Memory Organization：256K x 16
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：12ns
- Voltage - Supply：3V ~ 3.6V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：48-TFBGA
- Supplier Device Package：48-CABGA (9x9)
- Access Time：12 ns
- Grade：-
- Qualification：-
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Overview
The IDT71V416L12BEGI is a 4Mbit (256K x 16) asynchronous static random-access memory manufactured by Renesas Electronics. It operates on a single 3.3V power supply with an access time of 12ns and a write cycle time of 12ns. The device utilizes a parallel interface and is housed in a 48-CABGA package. It supports surface mount installation and functions within a commercial temperature range of 0°C to +70°C.
Feature Summary
- Fully static asynchronous operation requiring no clock signals or periodic refresh cycles for data retention.
- Bidirectional inputs and outputs are LVTTL-compatible, ensuring direct interfacing with standard logic families.
- Center power and ground pin configuration optimizes signal integrity and reduces noise coupling.
Applications
- High-speed data buffering in telecommunications equipment
- Cache memory implementation in industrial control systems
- Data storage in embedded network appliances
Procurement Notes
Verify the specific suffix BEGI against official Renesas documentation to confirm the CABGA-48 package type and lead finish specifications. Ensure compatibility with existing PCB footprints and reflow soldering profiles. Confirm RoHS compliance status as manufacturing processes may vary across production batches.
Selection Notes
Select this component when a 12ns access speed is required for 256K x 16 word organization. The CABGA-48 package offers a compact form factor suitable for space-constrained designs. Verify that the system voltage aligns with the 3.3V requirement and that LVTTL logic levels match the host processor interface.
Part Context
This part belongs to the 71V416L series of high-performance CMOS SRAMs. The series provides various access speeds and packaging options to support diverse embedded memory requirements. The 71V416L12 variant specifically targets applications needing fast read/write cycles within a standard 3.3V environment.
Replacement Considerations
Consult official Renesas substitution guides for verified equivalents. Cross-reference pinouts and electrical characteristics carefully before replacing obsolete components.
