71V416L12BEI8

Overview

The Renesas Electronics Corporation 71V416L12BEI8 is a 4 Mbit (256K x 16) asynchronous static random-access memory (SRAM) IC. It operates on a single 3.3 V supply with a voltage range of 3.0 V to 3.6 V. The device features a 12 ns access time and utilizes a 48-pin CABGA package. Maximum power supply current is specified at 170 mA. It supports an operating temperature range from -40 °C to +85 °C.

Feature Summary

• Fully static asynchronous circuitry requiring no clocks or refresh cycles for operation.
• Bidirectional inputs and outputs are LVTTL-compatible for direct interface with logic systems.
• Center power and ground pinout configuration optimizes signal integrity and thermal performance.

Applications

• High-speed data buffering in embedded processing systems
• Cache memory implementation in microcontroller architectures
• Industrial control system data storage

Procurement Notes

Verify the specific suffix BEI8 against official Renesas documentation to confirm package type and compliance status. Confirm availability as this component may be subject to end-of-life restrictions or limited distribution channels. Ensure environmental compliance requirements match project specifications before procurement.

Selection Notes

Select this component when a 256K x 16 organization is required with 12 ns speed. Compare against other 71V416 variants if different access times or packages are needed. Verify that the 3.3 V supply voltage aligns with the target system design constraints.

Part Context

This part belongs to the Renesas 71V416 series of 3.3 V CMOS SRAMs. The series offers various access speeds and package options, including TSOP and BGA configurations. The 71V416L12 variant specifically denotes the 12 ns speed grade within this family.

Replacement Considerations

Check for IDT71V416L12BEI8 as a potential equivalent from Integrated Device Technology. Verify pin compatibility and electrical specifications before substitution.