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Product Detailed Parameters
- Description:71V416 - 4 MEG (256K X 16-BIT) 3
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:256K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:12ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package:44-TSOP II
- Access Time:12 ns
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Overview
The IDT71V416L12PHG is a 3.3V CMOS static random-access memory (SRAM) organized as 256K x 16 bits, providing a total storage capacity of 4 megabits. It utilizes fully static asynchronous circuitry that requires no clock signals or periodic refresh cycles for data retention. The device features LVTTL-compatible bidirectional inputs and outputs, operating from a single 3.3V power supply within a specified range of 3.0V to 3.6V. It is housed in a 44-lead Thin Shrink Small Outline Package (TSOP II) with a 0.400-inch width.
Feature Summary
- Employs fully static asynchronous architecture eliminating the need for external clocks or refresh operations
- Features LVTTL-compatible bidirectional I/Os for direct interface with standard logic families
- Operates on a single 3.3V power supply with defined voltage limits
- Utilizes center power and ground pinout configuration for improved signal integrity
Applications
- High-speed data buffering in telecommunications equipment
- Cache memory implementation in embedded processing systems
- Data storage in industrial control applications requiring non-volatile-like retention without battery backup
- Test and measurement instrumentation requiring fast random access
Procurement Notes
Verify the specific suffix 'L' confirms the 3.3V operating voltage variant, distinct from 5V versions. Confirm the 'PHG' package code matches the required 44-TSOP II footprint dimensions. Check RoHS compliance status against current manufacturing notices, as Renesas may issue updates. Ensure the moisture sensitivity level rating aligns with your facility's reflow soldering capabilities.
Selection Notes
Select this component when a 256K x 16 organization is required at 3.3V logic levels. Compare access times against system timing requirements; verify if faster variants like the 10ns version are necessary. Consider the TSOP II package profile for board space constraints. Evaluate power consumption differences between active and standby modes relative to system thermal design.
Part Context
This part belongs to the IDT 71V416 family of high-performance SRAMs. The 'L' suffix typically denotes the 3.3V voltage variant, while other suffixes may indicate different speeds or packaging options. The family shares common architectural features but varies in electrical specifications and physical form factors to suit diverse design needs.
Replacement Considerations
The IDT71V416L10PHGI is a verified substitute offering faster 10ns access time within the same 3.3V specification and package type. Other family members like the 71V416L15PHG provide slower speeds but maintain compatibility.
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