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Product Detailed Parameters
- Description:IC SRAM 4MBIT PARALLEL 44TSOP II
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tube
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:256K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:12ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package:44-TSOP II
- Access Time:12 ns
- Grade:-
- Qualification:-
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Overview
The Renesas Electronics Corporation 71V416L12PHG is a static random-access memory (SRAM) integrated circuit with a total storage capacity of 4 megabits. The device is organized as 256 kilowords by 16 bits and utilizes an asynchronous parallel interface for data transfer. It operates within a supply voltage range of 3.0 volts to 3.6 volts, with a maximum power consumption current of 180 milliamperes. The component features a typical access time of 12 nanoseconds and supports surface-mount installation in a 44-pin Thin Shrink Small Outline Package (TSOP II). It is rated for industrial operating temperatures ranging from -40 degrees Celsius to +85 degrees Celsius.
Feature Summary
- Asynchronous parallel interface architecture for standard memory control
- Industrial temperature rating suitable for demanding environments
- CMOS technology ensuring low power consumption during operation
Applications
- Embedded systems requiring fast volatile data storage
- Industrial control units needing reliable memory performance
- Automotive electronic modules operating in harsh conditions
Procurement Notes
Verify the specific package marking and manufacturer date code upon receipt to ensure authenticity. Confirm that the component matches the 44-TSOP physical dimensions and pinout configuration required by the design. Check for any relevant product change notices or end-of-life announcements from Renesas Electronics prior to finalizing procurement plans.
Selection Notes
Select this component when a 4Mb SRAM with 12ns access speed is required for industrial applications. Ensure the system design accommodates the 3.0V to 3.6V supply voltage range and the 44-pin TSOP II footprint. Compare against other variants in the 71V416 series if different access times or temperature ranges are needed.
Part Context
This part belongs to the Renesas 71V416 family of high-speed asynchronous SRAMs. The 'L' suffix typically denotes the industrial temperature grade, while '12' indicates the 12-nanosecond access time specification. The 'PHG' suffix identifies the specific 44-lead thin shrink small outline package variant manufactured by Renesas Electronics.
Replacement Considerations
The IDT71V416L12PHGI is a verified equivalent part number representing the same electrical specifications and package type.
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