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Product Detailed Parameters
- Description:IC SRAM 4MBIT PARALLEL 44TSOP II
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:4Mbit
- Memory Organization:256K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:12ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package:44-TSOP II
- Access Time:12 ns
- Grade:-
- Qualification:-
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Overview
The Renesas Electronics Corporation 71V416L12PHG8 is a 3.3V CMOS static random-access memory (SRAM) organized as 256K x 16 bits, providing a total storage capacity of 4 Mbit. It features an asynchronous parallel interface with a maximum access time of 12 ns. The device operates within a supply voltage range of 3.0 V to 3.6 V and supports a maximum power consumption of 180 mA. It is housed in a 44-pin TSOP package and is rated for an industrial operating temperature range from -40°C to +85°C.
Feature Summary
- Fully static asynchronous circuitry requiring no external clock signals or periodic refresh cycles for data retention.
- Bidirectional inputs and outputs are LVTTL-compatible, ensuring direct interfacing with standard logic families.
- Center power and ground pinout configuration designed to minimize noise and improve signal integrity.
Applications
- High-speed data buffering in telecommunications equipment
- Cache memory implementation in embedded processing systems
- Industrial control system data storage
Procurement Notes
Verify the specific suffix PHG8 against official Renesas documentation to confirm the 44-pin TSOP package and industrial temperature grade (-40°C to +85°C). Ensure compatibility with 3.3V logic levels and LVTTL input requirements. Confirm availability status directly with authorized distributors, as lead times may vary based on production schedules.
Selection Notes
Select this component when a 4 Mbit asynchronous SRAM with 12 ns speed is required for industrial environments. It is suitable for designs needing LVTTL compatibility and center power/ground pinouts. Compare against the 71V416S series if commercial temperature ranges suffice, or consider alternative packages if board space constraints differ.
Part Context
The 71V416L12PHG8 belongs to the Renesas 71V416 family of high-speed CMOS static RAMs. This family provides non-volatile-like performance without the complexity of DRAM refresh. The 'L' designation typically indicates the extended industrial temperature range, while 'PHG8' specifies the thin small-outline package variant.
Replacement Considerations
Check for cross-reference part numbers such as IDT71V416L12PHG8, which shares identical specifications. Verify pinout compatibility and electrical parameters before substituting with other 256Kx16 asynchronous SRAM devices.
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