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71V416L12PHGI8
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Product Detailed Parameters
- Description：IC SRAM 4MBIT PARALLEL 44TSOP II
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：4Mbit
- Memory Organization：256K x 16
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：12ns
- Voltage - Supply：3V ~ 3.6V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package：44-TSOP II
- Access Time：12 ns
- Grade：-
- Qualification：-
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Overview
The Renesas Electronics 71V416L12PHGI8 is a 4 Mbit (256K x 16) asynchronous static random-access memory (SRAM). It operates on a single 3.3V power supply with a voltage range of 3.0V to 3.6V. The device features a maximum access time of 12 ns and a maximum operating temperature of +85°C, suitable for industrial applications. It utilizes a 44-pin Thin Small Outline Package (TSOP II) with a 0.8 mm pitch. The component supports LVTTL-compatible bidirectional I/Os and requires no clock or refresh cycles.
Feature Summary
- Fully static asynchronous operation eliminating the need for external clocks or periodic refresh cycles
- Single 3.3V CMOS technology ensuring compatibility with low-voltage logic systems
- LVTTL-compatible bidirectional inputs and outputs for direct interface with standard logic families
Applications
- Industrial control systems requiring reliable data storage
- Embedded memory solutions in consumer electronics
- Automotive electronic modules within specified temperature ranges
Procurement Notes
Verify the specific suffix PHGI8 against official Renesas documentation to confirm package type and moisture sensitivity level. Confirm RoHS compliance status and lead-free specifications prior to integration. Check current availability as distribution channels may vary. Ensure ESD handling protocols are followed during assembly due to semiconductor sensitivity.
Selection Notes
Select this component when a 256K x 16 organization is required with 12 ns speed performance. It is appropriate for designs needing 3.3V operation with industrial temperature support. Compare against the 71V416S series if higher speed or different packaging is needed. Ensure the TSOP II footprint matches the PCB layout constraints.
Part Context
This part belongs to the Renesas 71V416 family of high-speed SRAMs. The 'L' designation typically indicates lower power consumption variants compared to the 'S' series. The 71V416 series provides non-volatile-like reliability without battery backup, serving as scratchpad memory or buffer storage in microcontroller-based systems.
Replacement Considerations
The IDT71V416L12PHGI8 is an equivalent part number from Integrated Device Technology, now part of Renesas. Verify pinout compatibility and electrical parameters before substitution.
